{"ok":true,"entity":{"id":"euv-lithography","name":"EUV Lithography","entityType":"concept","officialName":"Extreme Ultraviolet Lithography（EUV露光）","canonicalName":"EUV Lithography","displayName":"EUV Lithography","category":"先端半導体製造技術（リソグラフィ）","shortDescription":"EUVリソグラフィは、波長13.5nmの極端紫外線を使って先端半導体の微細な回路パターンをウエハーに転写する露光技術です。ASMLが量産用EUV露光装置を供給しており（2026年10月時点でASMLは自社を唯一の供給者としています）、開口数0.33のNXE系と0.55のHigh-NA EUV（EXE系）があります。2026年7月にはIntel 18Aの一部の層でHigh-NA EUVによる量産が始まったとASMLが発表したと報じられています。","primaryCluster":"semiconductors","parentEntity":null,"verificationStatus":"draft","website":"https://www.asml.com/en/products/euv-lithography-systems","updatedAt":"2026-10-08T04:59:44.910Z","secondaryClusters":[],"alias":["EUVL","EUV露光","極端紫外線リソグラフィ"],"searchKeywords":["EUV","EUVL","極端紫外線","EUV露光","リソグラフィ","High-NA EUV","13.5nm","ASML","半導体露光装置"]},"referenceIndex":["P-01-001","P-02-001","P-04-001","P-05-001","P-06-001"]}